2006. 9. 8 1/2 semiconductor technical data KDV142V silicon epitaxial pin type diode revision no : 0 for antenna switches in mobile applications. features low capacitance : c t =0.35[pf] (max.) low series resistance : r s =1.3[ ] (max.) small package : esc maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol rating unit reverse voltage v r 30 v forward current i f 100 ma junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit reverse current i r v r =30v - - 0.1 a forward voltage v f i f =10ma - - 1.0 v total capacitance c t v r =1v, f=1mhz - - 0.35 pf series resistance r s i f =10ma, f=100mhz - - 1.3 esd-capability * - c=200pf, r=0 , both forward and reverse direction 1 pulse 100 - - * failure cirterion : i r >100na at v r =30v. vsc dim millimeters a b c d e cathode mark c d b a e f f 2 1 1. anode 2. cathode 1.4 0.05 + _ 1.0 0.05 + _ 0.12 0.03 + _ 0.5 0.05 + _ 0.28 0.03 + _ 0.6 0.05 + _ marking pa 21 cathode mark
2006. 9. 8 2/2 KDV142V revision no : 0 reverse current i r (a) reverse voltage v r (v) i f - v f i r - v r forward voltage v f (v) forward voltage v f (v) forward voltage v f (v) forward current i f (a) r p - v f 0 0.2 0.4 0.6 0.8 0 0.2 0.6 0.4 0.8 1.0 10 -2 10 -4 10 -3 10 -2 10 -4 10 -6 10 2 10 1 10 0 10 -1 10 -8 10 -10 10 -12 10 5 10 4 10 3 10 2 10 1 10 0 10 -13 10 -11 10 -12 0204060 reverse voltage v r (v) total capacitance c t (pf) 0.1 c t - v r f=1mhz f=100mhz f=100mhz 1.0 10 0.1 1.0 series resistance r s ( ? ) series resistance parallel r p ( ? ) r s - i f
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